Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL8113LPBF IRL8113LPBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 1047525-IRL8113LPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 110W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-262 Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 105A (Tc) Gate-Source Threshold Voltage: 2.25V @ 250μA Max Gate Charge: 35nC @ 4.5V Max Input Capacitance: 2840pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6 mOhm @ 21A, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 1047525-IRL8113LPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 110W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-262 Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 105A (Tc) Gate-Source Threshold Voltage: 2.25V @ 250μA Max Gate Charge: 35nC @ 4.5V Max Input Capacitance: 2840pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6 mOhm @ 21A, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL8113LPBF - 1047525-IRL8113LPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL8113LPBF
1047525-IRL8113LPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL8113LPBF 1047525-IRL8113LPBF
Manufacturer: Infineon Technologies Win Source Part Number: 1047525-IRL8113LPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 110W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-262 Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 105A (Tc) Gate-Source Threshold Voltage: 2.25V @ 250μA Max Gate Charge: 35nC @ 4.5V Max Input Capacitance: 2840pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6 mOhm @ 21A, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 1047525-IRL8113LPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 110W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-262
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 105A (Tc)
Gate-Source Threshold Voltage: 2.25V @ 250μA
Max Gate Charge: 35nC @ 4.5V
Max Input Capacitance: 2840pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6 mOhm @ 21A, 10V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1047525-IRL8113LPBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL8113LPBF
Polarity N-Channel; N-Channel
V(BR)DSS 30 volts
PD 110000 milliwatts
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