Infineon Technologies AG IGBT Bare Dies IGC36T120T8L

Description
1200 V power IGBT chip The TRENCHSTOP™ IGBT combines the unique TRENCHSTOP™ and Fieldstop technology and is a benchmark in the industry. Summary of Features 1200V TRENCHSTOP™ and Fieldstop technology Low switching losses Positive temperature coefficient Easy paralleling
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Suppliers

Company
Product
Description
Supplier Links
IGBT Bare Dies - IGC36T120T8L - Infineon Technologies AG
Neubiberg, Germany
IGBT Bare Dies
IGC36T120T8L
IGBT Bare Dies IGC36T120T8L
1200 V power IGBT chip The TRENCHSTOP™ IGBT combines the unique TRENCHSTOP™ and Fieldstop technology and is a benchmark in the industry. Summary of Features 1200V TRENCHSTOP™ and Fieldstop technology Low switching losses Positive temperature coefficient Easy paralleling

1200 V power IGBT chip

The TRENCHSTOP™ IGBT combines the unique TRENCHSTOP™ and Fieldstop technology and is a benchmark in the industry.


Summary of Features

  • 1200V TRENCHSTOP™ and Fieldstop technology
  • Low switching losses
  • Positive temperature coefficient
  • Easy paralleling
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number IGC36T120T8L
Product Name IGBT Bare Dies
VCE(on) 1200 volts
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