MOSFET N-CH 60V 56A DPAK Product overview: IRFR1018ETRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 56A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 56A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFR1018ETRPBF can be used for catalog matching and distributor lookup.
MOSFET N-CH 60V 56A DPAK
N-Channel 60V 56A (Tc) 110W (Tc) Surface Mount D-Pak
N-Channel 60V 56A (Tc) 110W (Tc) Surface Mount D-Pak
N-Channel 60V 56A (Tc) 110W (Tc) Surface Mount D-Pak
Manufacturer: Infineon Technologies
Win Source Part Number: 001270-IRFR1018ETRPB
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 110W (Tc)
Family Name: IRFR1018E
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 56A (Tc)
Gate-Source Threshold Voltage: 4V @ 100μA
Max Gate Charge: 69nC @ 10V
Max Input Capacitance: 2290pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8.4 mOhm @ 47A, 10V
Alternative Parts (Cross-Reference): STD65N55LF3; STD65N55F3; STD60N55F3;
Introduction Date: February 28, 2008
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance
MOSFET, N-CH, 60V, 79A, 175DEG C, 110W; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:79A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes
MOSFET MOSFT 60V 79A 8.4mOhm 46nC Qg
MOSFET N-CH 60V 56A DPAK
| RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 2579400P | 278-IRFR1018ETRPBF | IRFR1018ETRPBF | IRFR1018ETRPBFTR-ND | 001270-IRFR1018ETRPBF | 13AC9119 | IRFR1018ETRPBF | IRFR1018ETRPBF |
| Product Name | MOSFETs | 60V 56A DPAK MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR1018ETRPBF | Mosfet, N-Ch, 60V, 79A, 175Deg C, 110W; Channel Type Infineon | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Package Type | TO-252 (DPAK); TO-252 | Tape & Reel (TR) | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | SOT3; TO-252 (DPAK); D-Pak | TO-3 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | ||||
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 60 volts | 60 volts | 60 volts | |||||
| PD | 110 milliwatts | 110000 milliwatts | 110000 milliwatts |
