Qorvo's UF3C120150K4S 1200 V, 150 mohm SiC FET products co-package its high-performance F3 SiC fast JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits very fast switching using a 4-terminal TO-247 package and the best reverse recovery characteristics of any device of similar ratings. These devices are excellent for switching inductive loads, and any application requiring standard gate drive.
N-Channel 1200V 18.4A (Tc) 166.7W (Tc) Through Hole TO-247-4
SICFET N-CH 1200V 18.4A TO247-4
MOSFET 1200V 150mOhm SiC FAST CASCODE G3
SIC SCHOTTKY DIODE, 1.2KV, 18.4A, TO-247 ROHS COMPLIANT: YES
Qorvo | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
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Product Category | RF Transistors | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors |
Product Number | UF3C120150K4S | 2312-UF3C120150K4S-ND | UF3C120150K4S | UF3C120150K4S | 47AK1761 |
Product Name | 1200 V, 150 mohm SiC FET | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Sic Schottky Diode, 1.2Kv, 18.4A, To-247 Rohs Compliant Unitedsic |
Transistor Technology / Material | 1200 V, 150 mohm SiC FET |