Qorvo 1200 V, 150 mohm SiC FET UF3C120150K4S

Description
Qorvo's UF3C120150K4S 1200 V, 150 mohm SiC FET products co-package its high-performance F3 SiC fast JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits very fast switching using a 4-terminal TO-247 package and the best reverse recovery characteristics of any device of similar ratings. These devices are excellent for switching inductive loads, and any application requiring standard gate drive.
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Product
Description
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1200 V, 150 mohm SiC FET - UF3C120150K4S - Qorvo
Greensboro, NC, United States
1200 V, 150 mohm SiC FET
UF3C120150K4S
1200 V, 150 mohm SiC FET UF3C120150K4S
Qorvo's UF3C120150K4S 1200 V, 150 mohm SiC FET products co-package its high-performance F3 SiC fast JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits very fast switching using a 4-terminal TO-247 package and the best reverse recovery characteristics of any device of similar ratings. These devices are excellent for switching inductive loads, and any application requiring standard gate drive.

Qorvo's UF3C120150K4S 1200 V, 150 mohm SiC FET products co-package its high-performance F3 SiC fast JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits very fast switching using a 4-terminal TO-247 package and the best reverse recovery characteristics of any device of similar ratings. These devices are excellent for switching inductive loads, and any application requiring standard gate drive.

Supplier's Site Datasheet
Single FETs, MOSFETs - 2312-UF3C120150K4S-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
2312-UF3C120150K4S-ND
Single FETs, MOSFETs 2312-UF3C120150K4S-ND
N-Channel 1200V 18.4A (Tc) 166.7W (Tc) Through Hole TO-247-4

N-Channel 1200V 18.4A (Tc) 166.7W (Tc) Through Hole TO-247-4

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - UF3C120150K4S - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
UF3C120150K4S
Discrete Semiconductor Products - Transistors - FETs, MOSFETs UF3C120150K4S
SICFET N-CH 1200V 18.4A TO247-4

SICFET N-CH 1200V 18.4A TO247-4

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 1200V 150mOhm SiC FAST CASCODE G3

MOSFET 1200V 150mOhm SiC FAST CASCODE G3

Buy Now Datasheet
Sic Schottky Diode, 1.2Kv, 18.4A, To-247 Rohs Compliant Unitedsic - 47AK1761 - Newark, An Avnet Company
Chicago, IL, United States
Sic Schottky Diode, 1.2Kv, 18.4A, To-247 Rohs Compliant Unitedsic
47AK1761
Sic Schottky Diode, 1.2Kv, 18.4A, To-247 Rohs Compliant Unitedsic 47AK1761
SIC SCHOTTKY DIODE, 1.2KV, 18.4A, TO-247 ROHS COMPLIANT: YES

SIC SCHOTTKY DIODE, 1.2KV, 18.4A, TO-247 ROHS COMPLIANT: YES

Supplier's Site

Technical Specifications

  Qorvo DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category RF Transistors Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number UF3C120150K4S 2312-UF3C120150K4S-ND UF3C120150K4S UF3C120150K4S 47AK1761
Product Name 1200 V, 150 mohm SiC FET Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Sic Schottky Diode, 1.2Kv, 18.4A, To-247 Rohs Compliant Unitedsic
Transistor Technology / Material 1200 V, 150 mohm SiC FET
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