Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFHS8342TR2PBF IRFHS8342TR2PBF

Manufacturer: Infineon Technologies
Win Source Part Number: 1046919-IRFHS8342TR2PBF
Packaging: Cut Reel
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-PQFN (2x2)
Dimension: 6-PowerVDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 8.8A (Ta), 19A (Tc)
Gate-Source Threshold Voltage: 2.35V @ 25μA
Max Gate Charge: 8.7nC @ 10V
Max Input Capacitance: 600pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 16 mOhm @ 8.5A, 10V
Alternative Parts (Cross-Reference): NTLUS4930NTAG; CSD17571Q2; IRFHS8342TRPBF;
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Sufficient

MOSFET N-CH 30V 8.8A PQFN Product overview: IRFHS8342TR2PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 8.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 8.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFHS8342TR2PBF can be used for catalog matching and distributor lookup.