Manufacturer: Infineon Technologies
Win Source Part Number: 205344-IRFB59N10DPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 59A (Tc)
Gate-Source Threshold Voltage: 5.5V @ 250μA
Max Gate Charge: 114nC @ 10V
Max Input Capacitance: 2450pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 25 mOhm @ 35.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Limited
N-Channel 100V 59A (Tc) 3.8W (Ta), 200W (Tc) Through Hole TO-220AB
MOSFET N-CH 100V 59A TO220AB
MOSFET MOSFT 100V 59A 25mOhm 76nC
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.025Ohm;ID 59A;TO-220AB;PD 200W;VGS +/-30V
MOSFET Transistor, N Channel, 59 A, 100 V, 25 mohm, 10 V, 5.5 V RoHS Compliant: Yes
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Allied Electronics, Inc. | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 205344-IRFB59N10DPBF | IRFB59N10DPBF-ND | IRFB59N10DPBF | IRFB59N10DPBF | 70017022 | 38K2494 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB59N10DPBF | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.025Ohm;ID 59A;TO-220AB;PD 200W;VGS +/-30V | Mosfet Transistor, N Channel, 59 A, 100 V, 25 Mohm, 10 V, 5.5 V Rohs Compliant Infineon |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | ||
| V(BR)DSS | 100 volts | 100 volts | ||||
| PD | 3800 to 200000 milliwatts | 200000 milliwatts | ||||
| TJ | -55 to 175 C (-67 to 347 F) |
