Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB59N10DPBF IRFB59N10DPBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 205344-IRFB59N10DPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 59A (Tc) Gate-Source Threshold Voltage: 5.5V @ 250μA Max Gate Charge: 114nC @ 10V Max Input Capacitance: 2450pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 25 mOhm @ 35.4A, 10V Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB59N10DPBF - 205344-IRFB59N10DPBF - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IRFB59N10DPBF-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFB59N10DPBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.025Ohm;ID 59A;TO-220AB;PD 200W;VGS +/-30V - 70017022 - Allied Electronics, Inc.
    Allied Electronics, Inc.
  • Mosfet Transistor, N Channel, 59 A, 100 V, 25 Mohm, 10 V, 5.5 V Rohs Compliant Infineon - 38K2494 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Infineon Technologies Win Source Part Number: 205344-IRFB59N10DPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 59A (Tc) Gate-Source Threshold Voltage: 5.5V @ 250μA Max Gate Charge: 114nC @ 10V Max Input Capacitance: 2450pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 25 mOhm @ 35.4A, 10V Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB59N10DPBF - 205344-IRFB59N10DPBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB59N10DPBF
205344-IRFB59N10DPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB59N10DPBF 205344-IRFB59N10DPBF
Manufacturer: Infineon Technologies Win Source Part Number: 205344-IRFB59N10DPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 59A (Tc) Gate-Source Threshold Voltage: 5.5V @ 250μA Max Gate Charge: 114nC @ 10V Max Input Capacitance: 2450pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 25 mOhm @ 35.4A, 10V Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 205344-IRFB59N10DPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 59A (Tc)
Gate-Source Threshold Voltage: 5.5V @ 250μA
Max Gate Charge: 114nC @ 10V
Max Input Capacitance: 2450pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 25 mOhm @ 35.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - IRFB59N10DPBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFB59N10DPBF-ND
Single FETs, MOSFETs IRFB59N10DPBF-ND
N-Channel 100V 59A (Tc) 3.8W (Ta), 200W (Tc) Through Hole TO-220AB

N-Channel 100V 59A (Tc) 3.8W (Ta), 200W (Tc) Through Hole TO-220AB

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFB59N10DPBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFB59N10DPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFB59N10DPBF
MOSFET N-CH 100V 59A TO220AB

MOSFET N-CH 100V 59A TO220AB

Supplier's Site
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.025Ohm;ID 59A;TO-220AB;PD 200W;VGS +/-30V - 70017022 - Allied Electronics, Inc.
Allied Electronics, Inc.
Fort Worth, TX, USA
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.025Ohm;ID 59A;TO-220AB;PD 200W;VGS +/-30V
70017022
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.025Ohm;ID 59A;TO-220AB;PD 200W;VGS +/-30V 70017022
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.025Ohm;ID 59A;TO-220AB;PD 200W;VGS +/-30V

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.025Ohm;ID 59A;TO-220AB;PD 200W;VGS +/-30V

Supplier's Site
Mosfet Transistor, N Channel, 59 A, 100 V, 25 Mohm, 10 V, 5.5 V Rohs Compliant Infineon - 38K2494 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 59 A, 100 V, 25 Mohm, 10 V, 5.5 V Rohs Compliant Infineon
38K2494
Mosfet Transistor, N Channel, 59 A, 100 V, 25 Mohm, 10 V, 5.5 V Rohs Compliant Infineon 38K2494
MOSFET Transistor, N Channel, 59 A, 100 V, 25 mohm, 10 V, 5.5 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 59 A, 100 V, 25 mohm, 10 V, 5.5 V RoHS Compliant: Yes

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IRFB59N10DPBF
MOSFET IRFB59N10DPBF
MOSFET MOSFT 100V 59A 25mOhm 76nC

MOSFET MOSFT 100V 59A 25mOhm 76nC

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited Allied Electronics, Inc. Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 205344-IRFB59N10DPBF IRFB59N10DPBF-ND IRFB59N10DPBF 70017022 38K2494 IRFB59N10DPBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB59N10DPBF Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.025Ohm;ID 59A;TO-220AB;PD 200W;VGS +/-30V Mosfet Transistor, N Channel, 59 A, 100 V, 25 Mohm, 10 V, 5.5 V Rohs Compliant Infineon MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 100 volts 100 volts
PD 3800 to 200000 milliwatts 200000 milliwatts
TJ -55 to 175 C (-67 to 347 F)
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