Infineon Technologies AG Single FETs, MOSFETs IRFB4127PBFXKMA1

The IRFB4127P is an N-channel MOSFET designed for high-efficiency switching applications such as synchronous rectification in SMPS and high-speed power switching. It is packaged in a TO-220AB case and features a drain-source breakdown voltage of 200 V, a continuous drain current of 76 A at 25°C, and a maximum on-resistance of 20 mΩ at VGS = 10 V. The device supports up to 300 A pulsed drain current and dissipates up to 375 W at 25°C. It has a junction-to-case thermal resistance of 0.4 °C/W and is rated for operation from -55°C to +175°C. The MOSFET meets AEC-Q200 and RoHS standards and is fully characterized for capacitance, avalanche energy (250 mJ single pulse), and dynamic performance including a dV/dt capability of 57 V/ns. Its body diode exhibits reverse recovery time of 136 ns at 25°C and forward voltage of 1.3 V at 44 A.