Infineon Technologies AG Single FETs, MOSFETs IRFB33N15DPBF

MOSFET N-CH 150V 33A TO220AB

N-Channel 150V 33A (Tc) 3.8W (Ta), 170W (Tc) Through Hole TO-220AB

Manufacturer: Infineon Technologies
Win Source Part Number: 205339-IRFB33N15DPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.8W (Ta), 170W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 33A (Tc)
Gate-Source Threshold Voltage: 5.5V @ 250μA
Max Gate Charge: 90nC @ 10V
Max Input Capacitance: 2020pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 56 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Limited

MOSFET N-CH 150V 33A TO220AB Product overview: IRFB33N15DPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150V, 33A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 150V, 33A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFB33N15DPBF can be used for catalog matching and distributor lookup.