MOSFET N-CH 200V 31A TO220AB Product overview: IRFB31N20DPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 31A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 31A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFB31N20DPBF can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 091102-IRFB31N20DPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.1W (Ta), 200W (Tc)
Family Name: IRFB31N20
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 31A (Tc)
Gate-Source Threshold Voltage: 5.5V @ 250μA
Max Gate Charge: 107nC @ 10V
Max Input Capacitance: 2370pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 82 mOhm @ 18A, 10V
Alternative Parts (Cross-Reference): STP40NF20; STP30NF20; STP20NF20;
Introduction Date: March 01, 2004
ECCN: EAR99
Country of Origin: Philippines
Estimated EOL Date: 2019
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Sufficient
N-Channel 200V 31A (Tc) 3.1W (Ta), 200W (Tc) Through Hole TO-220AB
MOSFET N-CH 200V 31A TO220AB
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.082Ohm;ID 31A;TO-220AB;PD 200W;VGS +/-30V
N CHANNEL MOSFET, 200V, 31A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:31A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5.5V; MSL:- RoHS Compliant: Yes
MOSFET N-CH 200V 31A TO220AB
MOSFET N-CH 200V 31A TO220AB
MOSFET MOSFT 200V 31A 82mOhm 70nC
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Allied Electronics, Inc. | Newark, An Avnet Company | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IRFB31N20DPBF | 091102-IRFB31N20DPBF | IRFB31N20DPBF-ND | IRFB31N20DPBF | 70017529 | 57J2554 | IRFB31N20DPBF | IRFB31N20DPBF |
| Product Name | 200V 31A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB31N20DPBF | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.082Ohm;ID 31A;TO-220AB;PD 200W;VGS +/-30V | N Channel Mosfet, 200V, 31A, To-220Ab; Channel Type Infineon | Single FETs, MOSFETs | MOSFET |
| PD | 3100 milliwatts | 3100 to 200000 milliwatts | 200000 milliwatts | 3100 milliwatts | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||||
| Package Type | Tube | TO-220; SOT3; TO-220AB | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-220 | TO-3; TO-220 | TO-220; TO-220-3 | |
| Packing Method | Tube | Rail; Tube; Tube/Rail | Tube; Tube | |||||
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel |
