Infineon Technologies AG Single FETs, MOSFETs IRFB3077PBFXKMA1

The IRFB3077PbF is a silicon N-channel MOSFET designed for high-efficiency power switching and synchronous rectification in switch-mode power supplies. It is packaged in a TO-220AB case with a maximum continuous drain current of 210 A at 25°C (silicon limited) and 120 A (wire bond limited). The device has a maximum on-resistance of 3.3 mΩ at 10 V gate drive and 75 A drain current, and supports a drain-to-source voltage of 75 V. It features a single-pulse avalanche energy rating of 200 mJ, a junction temperature range of -55°C to +175°C, and a thermal resistance from junction to case of 0.402°C/W. The part meets RoHS standards and is qualified for industrial applications.