Infineon Technologies AG Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF9530NSPBF

MOSFET P-CH 100V 14A D2PAK

Infineons range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Channel Type = P
Maximum Continuous Drain Current = 14 A
Maximum Drain Source Voltage = 100 V
Maximum Drain Source Resistance = 200 mOhms
Maximum Gate Threshold Voltage = 4V
Minimum Gate Threshold Voltage = 2V
Maximum Gate Source Voltage = -20 V, +20 V
Package Type = D2PAK (TO-263)
Mounting Type = Surface Mount
Transistor Configuration = Single

Infineons range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Channel Type = P
Maximum Continuous Drain Current = 14 A
Maximum Drain Source Voltage = 100 V
Maximum Drain Source Resistance = 200 mOhms
Maximum Gate Threshold Voltage = 4V
Minimum Gate Threshold Voltage = 2V
Maximum Gate Source Voltage = -20 V, +20 V
Package Type = D2PAK (TO-263)
Mounting Type = Surface Mount
Transistor Configuration = Single
Delivery on production packaging - Tube. This product is non-returnable.

Infineons range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Channel Type = P
Maximum Continuous Drain Current = 14 A
Maximum Drain Source Voltage = 100 V
Maximum Drain Source Resistance = 200 mOhms
Maximum Gate Threshold Voltage = 4V
Minimum Gate Threshold Voltage = 2V
Maximum Gate Source Voltage = -20 V, +20 V
Package Type = D2PAK (TO-263)
Mounting Type = Surface Mount
Pin Count = 3

P-Channel 100V 14A (Tc) 3.8W (Ta), 79W (Tc) Surface Mount D2PAK

Manufacturer: Infineon Technologies
Win Source Part Number: 040705-IRF9530NSPBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3.8W (Ta), 79W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Not For New Designs
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 14A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 58nC @ 10V
Max Input Capacitance: 760pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 200 mOhm @ 8.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Limited