100V, P-channel HEXFET transistor designed for switching applications such as power supplies, motor controls, and high-energy pulse circuits, housed in a hermetically sealed TO-204AA (modified TO-3) package. It has a maximum continuous drain current of -11A at 25°C, a static drain-to-source on-state resistance of 0.30 Ω at VGS = -10V and ID = -7.0A, and supports repetitive avalanche energy up to 7.5 mJ. The device features a peak diode recovery dv/dt rating of -5.5 V/ns, a junction temperature range of -55°C to 150°C, and meets MIL-PRF-19500/562 qualification. Thermal resistance from junction to case is 1.67 °C/W.
100V, P-Channel Repetitive Avalanche and DV/DT Rated HEXFET Transistor
| Rochester Electronics | |
|---|---|
| Product Category | Transistors |
| Product Number | IRF9130CECC |
| Polarity | P-Channel |
