Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF8910PBFCT-ND IRF8910PBFCT-ND

Manufacturer: Infineon Technologies
Win Source Part Number: 205324-IRF8910PBFCT-ND
Packaging: Cut Reel
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 2W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 10A
Gate-Source Threshold Voltage: 2.55V @ 250μA
Max Gate Charge: 11nC @ 4.5V
Max Input Capacitance: 960pF @ 10V
Maximum Rds On at Id,Vgs: 13.4 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Limited

MOSFET 2N-CH 20V 10A 8-SOIC Product overview: IRF8910PBFCT-ND from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 10A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 10A, SOIC, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IRF8910PBFCT-ND can be used for catalog matching and distributor lookup.