Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7751TR IRF7751TR

Description
Manufacturer: Infineon Technologies Win Source Part Number: 001925-IRF7751TR Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-TSSOP Maximum Power Dissipation: 1W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 4.5A Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 44nC @ 10V Max Input Capacitance: 1464pF @ 25V Maximum Rds On at Id,Vgs: 35 mOhm @ 4.5A, 10V Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 001925-IRF7751TR Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-TSSOP Maximum Power Dissipation: 1W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 4.5A Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 44nC @ 10V Max Input Capacitance: 1464pF @ 25V Maximum Rds On at Id,Vgs: 35 mOhm @ 4.5A, 10V Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Limited
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Suppliers

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7751TR - 001925-IRF7751TR - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7751TR
001925-IRF7751TR
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7751TR 001925-IRF7751TR
Manufacturer: Infineon Technologies Win Source Part Number: 001925-IRF7751TR Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-TSSOP Maximum Power Dissipation: 1W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 4.5A Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 44nC @ 10V Max Input Capacitance: 1464pF @ 25V Maximum Rds On at Id,Vgs: 35 mOhm @ 4.5A, 10V Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 001925-IRF7751TR
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-TSSOP
Maximum Power Dissipation: 1W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 4.5A
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 44nC @ 10V
Max Input Capacitance: 1464pF @ 25V
Maximum Rds On at Id,Vgs: 35 mOhm @ 4.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Limited

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 001925-IRF7751TR
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7751TR
Polarity P-Channel
V(BR)DSS 30 volts
PD 1000 milliwatts
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