Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK2625ALS 2SK2625ALS

The 2SK2625ALS is an N-channel silicon MOSFET designed for general-purpose switching, housed in a TO-220FI(LS) package. It has a drain-to-source voltage rating of 600 V, a continuous drain current of 4.4 A at Tc=25°C, and a pulsed drain current of 16 A. The device exhibits a typical on-state resistance of 2.0 Ω at 2.5 A and 15 V gate-source voltage, with a gate charge of 20 nC. The switching times are 20 ns for turn-on delay and rise time, and 50 ns for turn-off delay. The channel temperature maximum is 150°C, and the storage temperature range is -55°C to +150°C. The avalanche energy is 87 mJ at 4 A avalanche current under specified conditions.