Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7701TRPBF IRF7701TRPBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 1046689-IRF7701TRPBF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-TSSOP Dimension: 8-TSSOP (0.173", 4.40mm Width) Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 10A (Ta) Gate-Source Threshold Voltage: 1.2V @ 250μA Max Gate Charge: 100nC @ 4.5V Max Input Capacitance: 5050pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 11 mOhm @ 10A, 4.5V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance Quantity per package: 4k pcs
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 1046689-IRF7701TRPBF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-TSSOP Dimension: 8-TSSOP (0.173", 4.40mm Width) Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 10A (Ta) Gate-Source Threshold Voltage: 1.2V @ 250μA Max Gate Charge: 100nC @ 4.5V Max Input Capacitance: 5050pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 11 mOhm @ 10A, 4.5V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance Quantity per package: 4k pcs
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7701TRPBF - 1046689-IRF7701TRPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7701TRPBF
1046689-IRF7701TRPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7701TRPBF 1046689-IRF7701TRPBF
Manufacturer: Infineon Technologies Win Source Part Number: 1046689-IRF7701TRPBF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-TSSOP Dimension: 8-TSSOP (0.173", 4.40mm Width) Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 10A (Ta) Gate-Source Threshold Voltage: 1.2V @ 250μA Max Gate Charge: 100nC @ 4.5V Max Input Capacitance: 5050pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 11 mOhm @ 10A, 4.5V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance Quantity per package: 4k pcs

Manufacturer: Infineon Technologies
Win Source Part Number: 1046689-IRF7701TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-TSSOP
Dimension: 8-TSSOP (0.173", 4.40mm Width)
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 10A (Ta)
Gate-Source Threshold Voltage: 1.2V @ 250μA
Max Gate Charge: 100nC @ 4.5V
Max Input Capacitance: 5050pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 11 mOhm @ 10A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance
Quantity per package: 4k pcs

Buy Now Datasheet
Singapore
12V 10A MOSFET Transistor
278-IRF7701TRPBF
12V 10A MOSFET Transistor 278-IRF7701TRPBF
MOSFET P-CH 12V 10A 8TSSOP Product overview: IRF7701TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 10A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 10A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF7701TRPBF can be used for catalog matching and distributor lookup.

MOSFET P-CH 12V 10A 8TSSOP Product overview: IRF7701TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 10A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 10A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF7701TRPBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - IRF7701TRPBFTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF7701TRPBFTR-ND
Single FETs, MOSFETs IRF7701TRPBFTR-ND
P-Channel 12V 10A (Ta) 1.5W (Ta) Surface Mount 8-TSSOP

P-Channel 12V 10A (Ta) 1.5W (Ta) Surface Mount 8-TSSOP

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF7701TRPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF7701TRPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF7701TRPBF
MOSFET P-CH 12V 10A 8TSSOP

MOSFET P-CH 12V 10A 8TSSOP

Supplier's Site
Single FETs, MOSFETs - IRF7701TRPBF - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRF7701TRPBF
Single FETs, MOSFETs IRF7701TRPBF
MOSFET P-CH 12V 10A 8TSSOP

MOSFET P-CH 12V 10A 8TSSOP

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global)
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1046689-IRF7701TRPBF 278-IRF7701TRPBF IRF7701TRPBFTR-ND IRF7701TRPBF IRF7701TRPBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7701TRPBF 12V 10A MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Single FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel P-Channel; P-Channel
V(BR)DSS 12 volts 12 volts
PD 1500 milliwatts 1500 milliwatts 1500 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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