Infineon Technologies AG Single FETs, MOSFETs IRF7465TRPBFXTMA1

Description
PLANAR 40<-<100V
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Description
PLANAR 40<-<100V
Request a Quote
Datasheet
Datasheet Summary
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The IRF7465PbF is a single N-channel MOSFET designed for high-frequency DC-DC converters. It is packaged in an SO-8 case with a maximum continuous drain current of 1.9 A at 25°C and 1.5 A at 70°C, and a drain-to-source breakdown voltage of 150 V. The on-resistance is 0.28 Ω at 10 V gate-source voltage. It has a power dissipation of 2.5 W at 25°C, with a junction-to-ambient thermal resistance of 50°C/W. The device operates from -55°C to 150°C and is characterized for avalanche energy up to 40 mJ and avalanche current up to 1.9 A. The gate-to-drain charge is fully characterized to simplify switching loss optimization.

Datasheet Summary
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The IRF7465PbF is a single N-channel MOSFET designed for high-frequency DC-DC converters. It is packaged in an SO-8 case with a maximum continuous drain current of 1.9 A at 25°C and 1.5 A at 70°C, and a drain-to-source breakdown voltage of 150 V. The on-resistance is 0.28 Ω at 10 V gate-source voltage. It has a power dissipation of 2.5 W at 25°C, with a junction-to-ambient thermal resistance of 50°C/W. The device operates from -55°C to 150°C and is characterized for avalanche energy up to 40 mJ and avalanche current up to 1.9 A. The gate-to-drain charge is fully characterized to simplify switching loss optimization.

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Single FETs, MOSFETs - 448-IRF7465TRPBFXTMA1TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
448-IRF7465TRPBFXTMA1TR-ND
Single FETs, MOSFETs 448-IRF7465TRPBFXTMA1TR-ND
PLANAR 40<-<100V

PLANAR 40<-<100V

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number 448-IRF7465TRPBFXTMA1TR-ND
Product Name Single FETs, MOSFETs
Polarity N-Channel
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