Infineon Technologies AG Power Field-Effect Transistor, 15A I(D), 25V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3 IRF6622

Description

Power Field-Effect Transistor, 15A I(D), 25V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3

Utmel Electronic Limited

Description

Power Field-Effect Transistor, 15A I(D), 25V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3

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Power Field-Effect Transistor, 15A I(D), 25V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3 - 3717-IRF6622 - Utmel Electronic Limited

Utmel Electronic Limited

Hong Kong, China

Power Field-Effect Transistor, 15A I(D), 25V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3
3717-IRF6622

Power Field-Effect Transistor, 15A I(D), 25V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3 3717-IRF6622

Power Field-Effect Transistor, 15A I(D), 25V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3

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Technical Specifications

	Utmel Electronic Limited
Product Category	Transistors
Product Number	3717-IRF6622
Product Name	Power Field-Effect Transistor, 15A I(D), 25V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3
Polarity	N-Channel