Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6201TRPBF IRF6201TRPBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 1046528-IRF6201TRPBF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 27A (Ta) Gate-Source Threshold Voltage: 1.1V @ 100μA Max Gate Charge: 195nC @ 4.5V Max Input Capacitance: 8555pF @ 16V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 2.45 mOhm @ 27A, 4.5V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 1046528-IRF6201TRPBF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 27A (Ta) Gate-Source Threshold Voltage: 1.1V @ 100μA Max Gate Charge: 195nC @ 4.5V Max Input Capacitance: 8555pF @ 16V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 2.45 mOhm @ 27A, 4.5V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6201TRPBF - 1046528-IRF6201TRPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6201TRPBF
1046528-IRF6201TRPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6201TRPBF 1046528-IRF6201TRPBF
Manufacturer: Infineon Technologies Win Source Part Number: 1046528-IRF6201TRPBF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 27A (Ta) Gate-Source Threshold Voltage: 1.1V @ 100μA Max Gate Charge: 195nC @ 4.5V Max Input Capacitance: 8555pF @ 16V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 2.45 mOhm @ 27A, 4.5V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 1046528-IRF6201TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 27A (Ta)
Gate-Source Threshold Voltage: 1.1V @ 100μA
Max Gate Charge: 195nC @ 4.5V
Max Input Capacitance: 8555pF @ 16V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 2.45 mOhm @ 27A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - IRF6201TRPBFTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF6201TRPBFTR-ND
Single FETs, MOSFETs IRF6201TRPBFTR-ND
N-Channel 20V 27A (Ta) 2.5W (Ta) Surface Mount 8-SO

N-Channel 20V 27A (Ta) 2.5W (Ta) Surface Mount 8-SO

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET MOSFT 20V 27A 2.5mOhm 2.5V cpbl

MOSFET MOSFT 20V 27A 2.5mOhm 2.5V cpbl

Buy Now Datasheet
Single FETs, MOSFETs - IRF6201TRPBF - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRF6201TRPBF
Single FETs, MOSFETs IRF6201TRPBF
MOSFET N-CH 20V 27A 8SO

MOSFET N-CH 20V 27A 8SO

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF6201TRPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF6201TRPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF6201TRPBF
MOSFET N-CH 20V 27A 8SO

MOSFET N-CH 20V 27A 8SO

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1046528-IRF6201TRPBF IRF6201TRPBFTR-ND IRF6201TRPBF IRF6201TRPBF IRF6201TRPBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6201TRPBF Single FETs, MOSFETs MOSFET Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 20 volts 20 volts
PD 2500 milliwatts 2500 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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