Infineon Technologies AG Single FETs, MOSFETs IRF6201TRPBF

Description
N-Channel 20V 27A (Ta) 2.5W (Ta) Surface Mount 8-SO
Request a Quote Datasheet
Description
N-Channel 20V 27A (Ta) 2.5W (Ta) Surface Mount 8-SO
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRF6201TRPBFTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF6201TRPBFTR-ND
Single FETs, MOSFETs IRF6201TRPBFTR-ND
N-Channel 20V 27A (Ta) 2.5W (Ta) Surface Mount 8-SO

N-Channel 20V 27A (Ta) 2.5W (Ta) Surface Mount 8-SO

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6201TRPBF - 1046528-IRF6201TRPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6201TRPBF
1046528-IRF6201TRPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6201TRPBF 1046528-IRF6201TRPBF
Manufacturer: Infineon Technologies Win Source Part Number: 1046528-IRF6201TRPBF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 27A (Ta) Gate-Source Threshold Voltage: 1.1V @ 100μA Max Gate Charge: 195nC @ 4.5V Max Input Capacitance: 8555pF @ 16V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 2.45 mOhm @ 27A, 4.5V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 1046528-IRF6201TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 27A (Ta)
Gate-Source Threshold Voltage: 1.1V @ 100μA
Max Gate Charge: 195nC @ 4.5V
Max Input Capacitance: 8555pF @ 16V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 2.45 mOhm @ 27A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF6201TRPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF6201TRPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF6201TRPBF
MOSFET N-CH 20V 27A 8SO

MOSFET N-CH 20V 27A 8SO

Supplier's Site
Single FETs, MOSFETs - IRF6201TRPBF - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRF6201TRPBF
Single FETs, MOSFETs IRF6201TRPBF
MOSFET N-CH 20V 27A 8SO

MOSFET N-CH 20V 27A 8SO

Supplier's Site
Sheung Wan, Hong Kong
MOSFET MOSFT 20V 27A 2.5mOhm 2.5V cpbl

MOSFET MOSFT 20V 27A 2.5mOhm 2.5V cpbl

Buy Now Datasheet

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global) VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IRF6201TRPBFTR-ND 1046528-IRF6201TRPBF IRF6201TRPBF IRF6201TRPBF IRF6201TRPBF
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6201TRPBF Discrete Semiconductor Products - Transistors - FETs, MOSFETs Single FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel
Package Type "8-SOIC (0.154"", 3.90mm Width)" SOT3; 8-SO 8-SOIC (0.154, 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
V(BR)DSS 20 volts 20 volts
PD 2500 milliwatts 2500 milliwatts
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