N-Channel 100V 9.7A (Tc) 3.8W (Ta), 48W (Tc) Surface Mount D2PAK
Manufacturer: Infineon Technologies
Win Source Part Number: 1046503-IRF520NSTRLP
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.8W (Ta), 48W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 9.7A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 25nC @ 10V
Max Input Capacitance: 330pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 200 mOhm @ 5.7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 100V 9.7A D2PAK Product overview: IRF520NSTRLPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 9.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 9.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF520NSTRLPBF can be used for catalog matching and distributor lookup.
MOSFET N-CH 100V 9.7A D2PAK
MOSFET MOSFT 100V 9.5A 200mOhm 16.7nC
MOSFET, N-CH, 100V, 9.7A, 175DEG C, 48W; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:9.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
MOSFET N-CH 100V 9.7A D2PAK
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRF520NSTRLPBFTR-ND | 1046503-IRF520NSTRLPBF | 278-IRF520NSTRLPBF | IRF520NSTRLPBF | IRF520NSTRLPBF | 13AC9177 | IRF520NSTRLPBF |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF520NSTRLPBF | 100V 9.7A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 100V, 9.7A, 175Deg C, 48W; Channel Type Infineon | Single FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | ||||
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; SOT3; D2PAK | Tape & Reel (TR) | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-3 | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| V(BR)DSS | 100 volts | 100 volts | |||||
| PD | 3800 to 48000 milliwatts | 3800 milliwatts | 3800 milliwatts |
