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AUIRF7675M2 - 120V-300V N-Channel Automotive MOSFET
AUIRF7675M2 - 120V-300V N-Channel Automotive MOSFET
MOSFET N-CH 150V 4.4A DIRECTFET
N-Channel 150V 4.4A (Ta), 18A (Tc) 2.7W (Ta), 45W (Tc) Surface Mount DirectFET™ Isometric M2
N-Channel 150V 4.4A (Ta), 18A (Tc) 2.7W (Ta), 45W (Tc) Surface Mount DirectFET™ Isometric M2
N-Channel 150V 4.4A (Ta), 18A (Tc) 2.7W (Ta), 45W (Tc) Surface Mount DirectFET™ Isometric M2
MOSFET N-CH 150V 4.4A DIRECTFET
MOSFET 150V AUTO GRD 1 N-CH HEXFET DIRECTFET M2
Manufacturer: Infineon Technologies
Win Source Part Number: 737051-AUIRF7675M2TR
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: DIRECTFET M2
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Package: DirectFET Isometric M2
Power Dissipation (Maximum): 2.7W, 45W
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 150V
Id - Continuous Drain Current: 4.4A, 18A
Rds On (Maximum) at Id, Vgs: 56mOhm at 11A, 10V
Gate Source Voltage(th) (Maximum) at Id: 5V at 100μA
Gate Charge (Qg) (Maximum) at Vgs: 32nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 1360pF at 25V
MOSFET, AEC-Q101, N-CH, 150V, DIRECTFETM2; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.047ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
| Rochester Electronics | Shenzhen Shengyu Electronics Technology Limited | DigiKey | LIXINC Electronics Co., Limited | VAST STOCK CO., LIMITED | Win Source Electronics | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Transistors | RF MOSFET Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | AUIRF7675M2TR | AUIRF7675M2TR | AUIRF7675M2TR-ND | AUIRF7675M2TR | AUIRF7675M2TR | 737051-AUIRF7675M2TR | 91Y4161 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor | MOSFET | FETs - Single - AUIRF7675M2TR | Mosfet, Aec-Q101, N-Ch, 150V, Directfetm2; Transistor Polarity Infineon | |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| Package Type | MG-WDSON-5 | DirectFETTM Isometric M2 | DirectFET™ Isometric M2 | DirectFET鈩?Isometric M2 | SOT3 | TO-3 | |
| Packing Method | Tape Reel; Tape & Reel | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR | Tape Reel; Tape & Reel (TR)Cut Tape (CT)Digi-Reel庐 | Tape Reel; Reel | |||
| PD | 2700 to 45000 milliwatts | 2700 to 45000 milliwatts | |||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
