N-channel 60 V, 43 mΩ standard level MOSFET in an LFPAK56 (Power-SO8, SOT669) package, designed for automotive applications and qualified to AEC-Q101. It features a maximum drain-source voltage of 60 V, continuous drain current of 22 A at 25 °C, and total power dissipation of 45 W. The device has a drain-source on-state resistance of 29.8 mΩ at 25 °C and 96 mΩ at 175 °C, with a gate-source threshold voltage ranging from 1 V to 4.5 V across temperature. It supports repetitive avalanche energy up to 12 mJ and operates with a junction temperature range of -55 °C to 175 °C. The thermal resistance from junction to mounting base is 3.33 K/W.
Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
Features and benefits
Applications
N-Channel 60V 22A (Tc) 45W (Tc) Surface Mount LFPAK56, Power-SO8
N-Channel 60V 22A (Tc) 45W (Tc) Surface Mount LFPAK56, Power-SO8
N-Channel 60V 22A (Tc) 45W (Tc) Surface Mount LFPAK56, Power-SO8
MOSFET N-CH 60V 22A LFPAK56
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MOSFET N-channel 60 V 43 mOhm MOSFET
| Nexperia B.V. | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | BUK7Y43-60EX | 1727-BUK7Y43-60EXTR-ND | BUK7Y43-60EX | BUK7Y43-60EX | BUK7Y43-60EX |
| Product Name | N-channel 60 V, 43 mΩ standard level MOSFET in LFPAK56 | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| MOSFET Operating Mode | Enhancement | ||||
| V(BR)DSS | 60 volts | 60 volts | |||
| IDSS | 22000 milliamps | 22000 milliamps | |||
| VGS(off) | 20 volts | ||||
| PD | 45 milliwatts | 45000 milliwatts |
