Infineon Technologies AG Single FETs, MOSFETs IPP029N15NM6AKSA1

The IPP029N15NM6 is an N-channel MOSFET designed for high-efficiency power conversion in industrial applications, housed in a PG-TO220-3 package measuring 15.95 mm max length, 10.36 mm max width, and 29.65 mm max height. It features a maximum drain-source voltage of 150 V, a maximum continuous drain current of 197 A, and a typical on-resistance of 2.5 mΩ at 100 A and 10 V gate voltage. The device is 100% avalanche tested with a single-pulse avalanche energy rating of 1047 mJ and has a thermal resistance junction-to-case of 0.38 °C/W. It is RoHS compliant and halogen-free per IEC 61249-2-21. The drain-source breakdown voltage is specified at 150 V minimum, and the gate threshold voltage ranges from 3.0 V to 4.0 V, with a total gate charge of 105 nC to 137 nC. Thermal performance is based on a 6 cm² copper area on FR4 PCB in still air.