Infineon Technologies AG Single FETs, MOSFETs IPN50R950CE

Description
COOLMOS N-CHANNEL POWER MOSFET
Description
COOLMOS N-CHANNEL POWER MOSFET
Datasheet
Datasheet Summary
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The IPN50R950CE is a 500V CoolMOS CE N-channel power MOSFET optimized for cost-sensitive consumer and lighting applications, featuring a PG-SOT223 package measuring 6.30 to 6.70 mm in length and 6.70 to 7.30 mm in width. It has a maximum continuous drain current of 6.4 A at 150°C, an on-state resistance of 0.95 Ω, and a total gate charge of 10.5 nC. The device supports avalanche energy of 68 mJ in single pulse and meets RoHS and halogen-free standards. It is qualified for standard grade applications.

Datasheet Summary
Powered by GS/AI

The IPN50R950CE is a 500V CoolMOS CE N-channel power MOSFET optimized for cost-sensitive consumer and lighting applications, featuring a PG-SOT223 package measuring 6.30 to 6.70 mm in length and 6.70 to 7.30 mm in width. It has a maximum continuous drain current of 6.4 A at 150°C, an on-state resistance of 0.95 Ω, and a total gate charge of 10.5 nC. The device supports avalanche energy of 68 mJ in single pulse and meets RoHS and halogen-free standards. It is qualified for standard grade applications.

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IPN50R950CE - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IPN50R950CE
Single FETs, MOSFETs IPN50R950CE
COOLMOS N-CHANNEL POWER MOSFET

COOLMOS N-CHANNEL POWER MOSFET

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global)
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number IPN50R950CE
Product Name Single FETs, MOSFETs
Polarity N-Channel; N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 500 volts
IDSS 6600 milliamps
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