MOSFET N-CH 600V 11.1A 4VSON
N-Channel 650V 11.1A (Tc) 96W (Tc) Surface Mount PG-VSON-4
N-Channel 650V 11.1A (Tc) 96W (Tc) Surface Mount PG-VSON-4
N-Channel 650V 11.1A (Tc) 96W (Tc) Surface Mount PG-VSON-4
Manufacturer: Infineon Technologies
Win Source Part Number: 1324442-IPL60R299CPA
Category: Discrete Semiconductor Products>Transistors
Packaging: Reel - TR
Standard Package: 3,000
Mounting: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 11.1A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Power Dissipation (Max): 96W (Tc)
Supplier Device Package: PG-VSON-4
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Vgs (Max): ±20V
Temperature Range - Operating: -40°C ~ 150°C (TJ)
Case / Package: 4-PowerTSFN
ECCN: EAR99
Fake Threat In the Open Market: 73
MSL Level: 2A (4 Weeks)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: IPL60R299CPAUMA1CT,I
Base Product Number: IPL60R299
Product Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
RoHS Status: ROHS3 Compliant
IPL60R299 - 600V CoolMOS N-Channel Power MOSFET
| Shenzhen Shengyu Electronics Technology Limited | DigiKey | Win Source Electronics | Rochester Electronics | |
|---|---|---|---|---|
| Product Category | RF Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET |
| Product Number | IPL60R299CPAUMA1 | IPL60R299CPAUMA1TR-ND | 1324442-IPL60R299CPAUMA1 | IPL60R299CPAUMA1 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | |
| Package Type | 4-PowerTSFN | 4-PowerTSFN | SOT3; 4-PowerTSFN | PG-VSON-4 |
