Infineon Technologies AG Transistors IPI024N06N3 G

Description
60V 120A 1.8mΩ@10V,100A 250W 3V@196uA 1 N-Channel TO-262-3 MOSFETs ROHS
  • Transistors - IPI024N06N3 G - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
60V 120A 1.8mΩ@10V,100A 250W 3V@196uA 1 N-Channel TO-262-3 MOSFETs ROHS

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Transistors - IPI024N06N3 G - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
IPI024N06N3 G
Transistors IPI024N06N3 G
60V 120A 1.8mΩ@10V,100A 250W 3V@196uA 1 N-Channel TO-262-3 MOSFETs ROHS

60V 120A 1.8mΩ@10V,100A 250W 3V@196uA 1 N-Channel TO-262-3 MOSFETs ROHS

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Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number IPI024N06N3 G
Product Name Transistors
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