Nexperia B.V. Single FETs, MOSFETs 2N7002F,215

Description
N-Channel 60V 475mA (Ta) 830mW (Ta) Surface Mount TO-236AB
Request a Quote Datasheet
Description
N-Channel 60V 475mA (Ta) 830mW (Ta) Surface Mount TO-236AB
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 568-5983-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
568-5983-2-ND
Single FETs, MOSFETs 568-5983-2-ND
N-Channel 60V 475mA (Ta) 830mW (Ta) Surface Mount TO-236AB

N-Channel 60V 475mA (Ta) 830mW (Ta) Surface Mount TO-236AB

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7002F,215 - 1004058-2N7002F,215 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7002F,215
1004058-2N7002F,215
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7002F,215 1004058-2N7002F,215
Manufacturer: Nexperia USA Inc. Win Source Part Number: 1004058-2N7002F,215 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 830mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-236AB (SOT23) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 475mA (Ta) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 0.69nC @ 10V Max Input Capacitance: 50pF @ 10V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2 Ohm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Sufficient

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1004058-2N7002F,215
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 830mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-236AB (SOT23)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 475mA (Ta)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 0.69nC @ 10V
Max Input Capacitance: 50pF @ 10V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 2 Ohm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Singapore, Singapore
60V 475MA MOSFET Transistor
278-2N7002F,215
60V 475MA MOSFET Transistor 278-2N7002F,215
MOSFET N-CH 60V 475MA TO236AB Product overview: 2N7002F,215 from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 475MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 475MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-2N7002F,215 can be used for catalog matching and distributor lookup.

MOSFET N-CH 60V 475MA TO236AB Product overview: 2N7002F,215 from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 475MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 475MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-2N7002F,215 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - 2N7002F,215 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
2N7002F,215
Discrete Semiconductor Products - Transistors - FETs, MOSFETs 2N7002F,215
MOSFET N-CH 60V 475MA TO236AB

MOSFET N-CH 60V 475MA TO236AB

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 568-5983-2-ND 1004058-2N7002F,215 278-2N7002F,215 2N7002F,215
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7002F,215 60V 475MA MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type SOT23; TO-236-3, SC-59, SOT-23-3 SOT3; SOT23; TO-236AB (SOT23) Tape & Reel (TR) SOT23; TO-236-3, SC-59, SOT-23-3
V(BR)DSS 60 volts
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