Infineon Technologies AG MOSFET IPD90N08S4-05

The IPD90N08S4-05 is an N-channel enhancement mode MOSFET designed for high-current switching applications. It is packaged in a PG-TO252-3-313 case with a maximum continuous drain current of 90 A and a drain-source on-state resistance of up to 5.3 mΩ at 10 V gate-source voltage. The device operates junction temperatures up to 175°C and is AEC-Q101 qualified. It features 100% avalanche testing, a drain-source breakdown voltage of 80 V, and supports a single-pulse avalanche energy of 240 mJ. The package is RoHS compliant and rated for reflow soldering up to 260°C. Thermal resistance from junction to case is 1.0 K/W.