N-Channel 650V 6A (Tc) 62.5W (Tc) Surface Mount PG-TO252-3
MOSFET N-CH 650V 6A TO252-3
MOSFET, N-CH, 650V, 6A, 150DEG C, 62.5W; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
| DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 448-IPD65R660CFDATMA1TR-ND | IPD65R660CFDATMA1 | 34AC1688 | IPD65R660CFDATMA1 |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 650V, 6A, 150Deg C, 62.5W; Channel Type Infineon | MOSFET |
| Polarity | N-Channel |
