Infineon Technologies AG 600V 20.2A MOSFET Transistor IPB60R190C6

MOSFETs N-Ch 600V 20.2A D2PAK-2 CoolMOS C6 Product overview: IPB60R190C6 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 20.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 20.2A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IPB60R190C6 can be used for catalog matching and distributor lookup.

Manufacturer: Infineon Technologies
Win Source Part Number: 139501-IPB60R190C6
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 151W (Tc)
Family Name: IPB60R190C6
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO263-2
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 20.2A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 630μA
Max Gate Charge: 63nC @ 10V
Max Input Capacitance: 1400pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 190 mOhm @ 9.5A, 10V
Alternative Parts (Cross-Reference): STB26N60M2; STB28N60M2; STB23NM60ND; STB24NM65N;
Introduction Date: August 27, 2009
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: 2022
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Limited