MOSFET N-CH 30V 180A TO263-7 Product overview: IPB180N03S4LH0ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 180A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 180A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPB180N03S4LH0AT
Manufacturer: Infineon Technologies
Win Source Part Number: 776848-IPB180N03S4LH
Series: OptiMOS
Packaging: Reel package
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Family Name: IPB180N03S4L-H0
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Manufacturer Package: PG-TO263-7-3
Channel Type Type: N
Drain Source Voltage: 30V
Vgs(th) (Maximum) @ Id: 2.2V @ 200μA
Gate Charge (Qg) (Maximum) @ Vgs: 300nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 23000pF @ 25V
Vgs (Maximum): ±16V
Power Dissipation (Maximum): 250W (Tc)
Rds On (Maximum) @ Id, Vgs: 0.95 mOhm @ 100A, 10V
Alternative Parts (Cross-Reference): IPB180N03S4LH0XT;
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: 2027
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited
N-Channel 30V 180A (Tc) 250W (Tc) Surface Mount PG-TO263-7-3
IPB180N03 - 20V-40V N-Channel Automotive MOSFET
MOSFET N-CH 30V 180A TO263-7
MOSFET N-CH 30V 180A TO263-7
MOSFET N-Ch 30V 180A D2PAK-6 OptiMOS-T2
MOSFET N-CH 30V 180A TO263-7-3
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Rochester Electronics | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IPB180N03S4LH0ATMA1 | 776848-IPB180N03S4LH0ATMA1 | IPB180N03S4LH0ATMA1TR-ND | IPB180N03S4LH0ATMA1 | IPB180N03S4LH0ATMA1 | IPB180N03S4LH0ATMA1 | IPB180N03S4LH0ATMA1 | 376-IPB180N03S4LH0ATMA1 |
| Product Name | 30V 180A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB180N03S4LH0ATMA1 | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | MOSFET N-CH 30V 180A TO263-7-3 | |
| PD | 250000 milliwatts | 250000 milliwatts | 250000 milliwatts | 250000 milliwatts | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||||
| Package Type | Tape & Reel (TR) | TO-263; SOT3 | TO-263; TO-263-7, D2PAK (6 Leads + Tab) | TO-263; TO-263-7 | TO-263; TO-263-7, D²Pak (6 Leads + Tab) | TO-263; TO-263-7, D2PAK (6 Leads + Tab) | ||
| Packing Method | Tape & Reel (TR) | Tape Reel; Reel package | Tape Reel; Tape & Reel | Tape Reel; Tape & Reel (TR) | Tape Reel; Tape & Reel (TR) | |||
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel |
