Infineon Technologies AG Single FETs, MOSFETs IPB09N03LA G

The IPB09N03LA G is an N-channel logic-level MOSFET designed for high-frequency DC/DC converters, housed in a PG-TO263-3-2 package. It has a continuous drain current rating of 50 A at 25°C and a maximum drain-source on-resistance of 8.9 mΩ at VGS = 10 V and ID = 30 A. The device supports an operating junction temperature up to 175°C, with a thermal resistance from junction to case of 2.4 K/W. It is qualified to JEDEC standards and meets RoHS compliance with Pb-free lead plating. The device is dv/dt rated and has a single-pulse avalanche energy rating of 75 mJ at ID = 45 A and RG = 25 Ω.