The IGT60R070D1 is a 600 V enhancement-mode GaN power transistor designed for high-efficiency switching in industrial, telecom, and data center SMPS applications. It is packaged in a PG-HSOF-8-3 case, with a thermal resistance from junction to case of 1 °C/W and junction-to-ambient of 62 °C/W on a minimal PCB footprint. The device has a maximum drain-source on-state resistance of 70 mΩ at 25 °C, a gate charge of 5.8 nC, and a pulsed drain current rating of 60 A. It exhibits zero reverse-recovery charge and supports reverse conduction. Operating junction temperature ranges from -55 °C to 150 °C, and it is qualified to JEDEC standards JESD47 and JESD22.
600 V CoolGaN™e-mode power transistor for ultimate efficiency and reliability
This product is not recommended for new designs. Please explore its successor IGT65R055D2
The IGT60R070D1 enables a more compact topology and higher efficiency at higher frequency operation.
It is certified through an extensive GaN-specific qualification process, exceeding industry standards.
Housed in the bottom-side cooled HSOF-8 (TO-leadless) package, it is designed for optimal power dissipation required in modern data centers, server, telecom, renewables and numerous other applications.
Summary of Features
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Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Transistors |
| Product Number | IGT60R070D1 |
| Product Name | Power - Gallium nitride (GaN) - GaN transistors - IGT60R070D1 |
| Polarity | N-Channel; N |
