Infineon Technologies AG Power - Gallium nitride (GaN) - GaN transistors - IGT60R070D1 IGT60R070D1

600 V CoolGaN™e-mode power transistor for ultimate efficiency and reliability This product is not recommended for new designs. Please explore its successor IGT65R055D2 The IGT60R070D1 enables a more compact topology and higher efficiency at higher frequency operation. It is certified through an extensive GaN-specific qualification process, exceeding industry standards. Housed in the bottom-side cooled HSOF-8 (TO-leadless) package, it is designed for optimal power dissipation required in modern data centers, server, telecom, renewables and numerous other applications. Summary of Features E-mode HEMT – normally OFF Ultrafast switching No reverse-recovery charge Capable of reverse conduction Low gate charge, low output charge Superior commutation ruggedness JEDEC qualified (JESD47, JESD22) Low dynamic RDS(on) Bottom-side cooled Benefits Improves system efficiency Improves power density Enables higher operating frequency System cost reduction savings Reduces EMI Potential Applications Industrial Telecom Renewable Datacenter SMPS based on the half-bridge topology Applications 48 V intermediate bus converter (IBC) DIN rail power supplies Energy Storage Systems Solutions for inductive wireless charging above 50 W Uninterruptible power supplies (UPS)