Infineon Technologies AG IGBT Discretes IGD06N60T

Description
600 V, 6 A IGBT Discrete in TO252 package Hard-switching 600 V, 6 A single TRENCHSTOP™ IGBT3 in a TO252 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. Summary of Features Lowest VCEsat drop for lower conduction losses Low switching losses Easy parallel switching capability due to positive temperature coefficient in VCEsat Very soft, fast recovery anti-parallel Emitter Controlled diode High ruggedness, temperature stable behavior Low EMI emissions Low gate charge Very tight parameter distribution Benefits Highest efficiency – low conduction and switching losses Comprehensive portfolio in 600 V and 1200 V for flexibility of design High device reliability Applications Connected and smart lighting for IoT
  • IGBT Discretes - IGD06N60T - Infineon Technologies AG
    Infineon Technologies AG
  • IGBTs - Single - IGD06N60T - 1185265-IGD06N60T - Win Source Electronics
    Win Source Electronics
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Description
600 V, 6 A IGBT Discrete in TO252 package Hard-switching 600 V, 6 A single TRENCHSTOP™ IGBT3 in a TO252 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. Summary of Features Lowest VCEsat drop for lower conduction losses Low switching losses Easy parallel switching capability due to positive temperature coefficient in VCEsat Very soft, fast recovery anti-parallel Emitter Controlled diode High ruggedness, temperature stable behavior Low EMI emissions Low gate charge Very tight parameter distribution Benefits Highest efficiency – low conduction and switching losses Comprehensive portfolio in 600 V and 1200 V for flexibility of design High device reliability Applications Connected and smart lighting for IoT
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
IGBT Discretes - IGD06N60T - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
IGBT Discretes
IGD06N60T
IGBT Discretes IGD06N60T
600 V, 6 A IGBT Discrete in TO252 package Hard-switching 600 V, 6 A single TRENCHSTOP™ IGBT3 in a TO252 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. Summary of Features Lowest VCEsat drop for lower conduction losses Low switching losses Easy parallel switching capability due to positive temperature coefficient in VCEsat Very soft, fast recovery anti-parallel Emitter Controlled diode High ruggedness, temperature stable behavior Low EMI emissions Low gate charge Very tight parameter distribution Benefits Highest efficiency – low conduction and switching losses Comprehensive portfolio in 600 V and 1200 V for flexibility of design High device reliability Applications Connected and smart lighting for IoT

600 V, 6 A IGBT Discrete in TO252 package

Hard-switching 600 V, 6 A single TRENCHSTOP™ IGBT3 in a TO252 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.


Summary of Features

  • Lowest VCEsat drop for lower conduction losses
  • Low switching losses
  • Easy parallel switching capability due to positive temperature coefficient in VCEsat
  • Very soft, fast recovery anti-parallel Emitter Controlled diode
  • High ruggedness, temperature stable behavior
  • Low EMI emissions
  • Low gate charge
  • Very tight parameter distribution

Benefits

  • Highest efficiency – low conduction and switching losses
  • Comprehensive portfolio in 600 V and 1200 V for flexibility of design
  • High device reliability

Applications

  • Connected and smart lighting for IoT
Supplier's Site Datasheet
IGBTs - Single - IGD06N60T - 1185265-IGD06N60T - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - IGD06N60T
1185265-IGD06N60T
IGBTs - Single - IGD06N60T 1185265-IGD06N60T
Manufacturer: Infineon Technologies Win Source Part Number: 1185265-IGD06N60T Manufacturer Homepage: www.infineon.com Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 1185265-IGD06N60T
Manufacturer Homepage: www.infineon.com
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance

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ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
IGBT Transistor
279-IGD06N60T
IGBT Transistor 279-IGD06N60T
IGBT in TRENCHSTOP and Fieldstop technology Product overview: IGD06N60T from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IGD06N60T can be used for catalog matching and distributor lookup.

IGBT in TRENCHSTOP and Fieldstop technology Product overview: IGD06N60T from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IGD06N60T can be used for catalog matching and distributor lookup.

Supplier's Site

Technical Specifications

  Infineon Technologies AG Win Source Electronics ERSAELECTRONICS PTE. LTD.
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number IGD06N60T 1185265-IGD06N60T 279-IGD06N60T
Product Name IGBT Discretes IGBTs - Single - IGD06N60T IGBT Transistor
VCE(on) 600 volts
Switching Speed 2 to 20 kHz
tr 6 ns
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