600 V, 6 A IGBT Discrete in TO252 package
Hard-switching 600 V, 6 A single TRENCHSTOP™ IGBT3 in a TO252 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.
Summary of Features
Lowest VCEsat drop for lower conduction losses
Low switching losses
Easy parallel switching capability due to positive temperature coefficient in VCEsat
Very soft, fast recovery anti-parallel Emitter Controlled diode
High ruggedness, temperature stable behavior
Low EMI emissions
Low gate charge
Very tight parameter distribution
Benefits
Highest efficiency – low conduction and switching losses
Comprehensive portfolio in 600 V and 1200 V for flexibility of design
High device reliability
Designers who used this product also designed with
BSS306N | Small Signal/Small Power MOSFET
BSS314PE | Small Signal/Small Power MOSFET
BSS306N | Small Signal/Small Power MOSFET
BSS314PE | Small Signal/Small Power MOSFET
BSS306N | Small Signal/Small Power MOSFET
BSS314PE | Small Signal/Small Power MOSFET
600 V, 6 A IGBT Discrete in TO252 package
Hard-switching 600 V, 6 A single TRENCHSTOP™ IGBT3 in a TO252 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.
Summary of Features
- Lowest VCEsat drop for lower conduction losses
- Low switching losses
- Easy parallel switching capability due to positive temperature coefficient in VCEsat
- Very soft, fast recovery anti-parallel Emitter Controlled diode
- High ruggedness, temperature stable behavior
- Low EMI emissions
- Low gate charge
- Very tight parameter distribution
Benefits
- Highest efficiency – low conduction and switching losses
- Comprehensive portfolio in 600 V and 1200 V for flexibility of design
- High device reliability
Designers who used this product also designed with
- BSS306N |
Small Signal/Small Power MOSFET
- BSS314PE |
Small Signal/Small Power MOSFET
- BSS306N |
Small Signal/Small Power MOSFET
- BSS314PE |
Small Signal/Small Power MOSFET
- BSS306N |
Small Signal/Small Power MOSFET
- BSS314PE |
Small Signal/Small Power MOSFET
