- Trained on our vast library of engineering resources.

Infineon Technologies AG Power - IGBT - IGBT Modules - FP75R12W3T7_B11 FP75R12W3T7_B11

Description
EasyPIM™ 3B 1200 V, 75 A IGBT module with TRENCHSTOP™ IGBT7, Emitter Controlled 7 diode, PressFIT contact technology and NTC. As a member of Easy3B package family, it enriches the product portfolio for industrial drives application. Summary of Features IGBT and diode are based on latest micro-pattern trenches technology Low Rth and low power losses Enhanced controllability of dv/dt Optimized for drive applications Benefits Higher power density Lower power losses Complete portfolio in 12mm height Platform-based design Power extension Reduction in system cost Reduced system complexity Applications Industrial motor drives and controls
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Power - IGBT - IGBT Modules - FP75R12W3T7_B11 - FP75R12W3T7_B11 - Infineon Technologies AG
Neubiberg, Germany
Power - IGBT - IGBT Modules - FP75R12W3T7_B11
FP75R12W3T7_B11
Power - IGBT - IGBT Modules - FP75R12W3T7_B11 FP75R12W3T7_B11
EasyPIM™ 3B 1200 V, 75 A IGBT module with TRENCHSTOP™ IGBT7, Emitter Controlled 7 diode, PressFIT contact technology and NTC. As a member of Easy3B package family, it enriches the product portfolio for industrial drives application. Summary of Features IGBT and diode are based on latest micro-pattern trenches technology Low Rth and low power losses Enhanced controllability of dv/dt Optimized for drive applications Benefits Higher power density Lower power losses Complete portfolio in 12mm height Platform-based design Power extension Reduction in system cost Reduced system complexity Applications Industrial motor drives and controls

EasyPIM™ 3B 1200 V, 75 A IGBT module with TRENCHSTOP™ IGBT7, Emitter Controlled 7 diode, PressFIT contact technology and NTC. As a member of Easy3B package family, it enriches the product portfolio for industrial drives application.


Summary of Features

  • IGBT and diode are based on latest micro-pattern trenches technology
  • Low Rth and low power losses
  • Enhanced controllability of dv/dt
  • Optimized for drive applications

Benefits

  • Higher power density
  • Lower power losses
  • Complete portfolio in 12mm height
  • Platform-based design
  • Power extension
  • Reduction in system cost
  • Reduced system complexity

Applications

  • Industrial motor drives and controls
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number FP75R12W3T7_B11
Product Name Power - IGBT - IGBT Modules - FP75R12W3T7_B11
VCES 1200 volts
Unlock Full Specs
to access all available technical data

Similar Products

IGBT Modules - FS50R12KT4_B11 - Infineon Technologies AG
Infineon Technologies AG
Specs
VCE(on) 1.85 volts
IC(max) 50 amps
Transistor Grade / Operating Range Industrial
View Details
3 suppliers
Small Signal/Small Power MOSFET - BSS83P - Infineon Technologies AG
Specs
Polarity P-Channel; P
Transistor Technology / Material Si/SiC
rDS(on) 2 ohms
View Details
3 suppliers
HiRel Silicon Bipolar Transistor - BFY196 (P) - Infineon Technologies AG
Specs
Package Type Micro-X
Packing Method SINGLE BOX
IC(max) 100 milliamps
View Details
Automotive IGBT Discretes - AIKW40N65DH5 - Infineon Technologies AG
Specs
VCE(on) 650 volts
Switching Speed 15 to 120 kHz
tr 11 ns
View Details