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Infineon Technologies AG HiRel Silicon Bipolar Transistor BFY196 (P)

Description
HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor For low noise, high-gain amplifiers up to 2GHz. For linear broadband amplifiers Hermetically sealed microwave package fT= 6,5 GHz F = 3 dB at 2 GHz Type Variant No. 07 Potential Applications Quality level for Engineering Models
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HiRel Silicon Bipolar Transistor - BFY196 (P) - Infineon Technologies AG
Neubiberg, Germany
HiRel Silicon Bipolar Transistor
BFY196 (P)
HiRel Silicon Bipolar Transistor BFY196 (P)
HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor For low noise, high-gain amplifiers up to 2GHz. For linear broadband amplifiers Hermetically sealed microwave package fT= 6,5 GHz F = 3 dB at 2 GHz Type Variant No. 07 Potential Applications Quality level for Engineering Models

HiRel Microwave Transistor


Summary of Features

  • HiRel Discrete and Microwave Semiconductor
  • For low noise, high-gain amplifiers up to 2GHz.
  • For linear broadband amplifiers
  • Hermetically sealed microwave package
  • fT= 6,5 GHz
  • F = 3 dB at 2 GHz
  • Type Variant No. 07

Potential Applications

Quality level for Engineering Models

Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Bipolar RF Transistors
Product Number BFY196 (P)
Product Name HiRel Silicon Bipolar Transistor
Package Type Micro-X
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