Qorvo's UJ4C075023K3S is a 750 V, 23 mohm Gen 4 SiC FET. It is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device's standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs. Available in the TO-247-3L package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.
N-Channel 750V 66A (Tc) 306W (Tc) Through Hole TO-247-3
Manufacturer: Qorvo
Category: Discrete Semiconductor Products- Transistors -FETs, MOSFETs -Single FETs, MOSFETs
Package: Tube
Product Status: Active
FET Type: N-Channel
Operating Temperature: -55°C ~ 175°C
Technology: N-Channel SiCFET (Cascode SiCJFET)
Drain to Source Voltage (Vdss): 750 V
Mounting Type: Through Hole
Supplier Device Package: TO-247-3
750V/23MOHM, SIC, CASCODE, G4, T
Qorvo | DigiKey | Win Source Electronics | Acme Chip Technology Co., Limited | |
---|---|---|---|---|
Product Category | RF Transistors | Transistors | Transistors | RF Transistors |
Product Number | UJ4C075023K3S | 2312-UJ4C075023K3S-ND | UJ4C075023K3S | |
Product Name | 750 V, 23 mohm SiC FET | Single FETs, MOSFETs | Discrete Semiconductor Products- Transistors -FETs, MOSFETs -Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
Transistor Technology / Material | 750 V, 23 mohm SiC FET |