Infineon Technologies AG Single FETs, MOSFETs BSS123 E6433

BSS 123 is an N-channel enhancement mode MOSFET for low-power switching applications, housed in a SOT-23 package. It has a drain-source voltage rating of 100 V, a continuous drain current of 0.17 A at 28 ℃, and a power dissipation of 0.36 W at 25 ℃. The gate threshold voltage ranges from 0.8 V to 2.0 V, and the drain-source on-state resistance is between 3 Ω and 6 Ω at VGS = 10 V and ID = 0.17 A. Operating and storage temperatures span from -55 ℃ to 150 ℃. The device meets MIL-STD-883 Class 1 for ESD sensitivity and complies with DIN 40 040 E and IEC 68-1 55/150/56 environmental standards.