Infineon Technologies AG Single FETs, MOSFETs BSP373 E6327

Description
N-Channel 100V 1.7A (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
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Description
N-Channel 100V 1.7A (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
Request a Quote Datasheet

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Single FETs, MOSFETs - BSP373E6327-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
BSP373E6327-ND
Single FETs, MOSFETs BSP373E6327-ND
N-Channel 100V 1.7A (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4

N-Channel 100V 1.7A (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSP373 E6327 - 1024450-BSP373 E6327 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSP373 E6327
1024450-BSP373 E6327
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSP373 E6327 1024450-BSP373 E6327
Manufacturer: Infineon Technologies Win Source Part Number: 1024450-BSP373 E6327 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.8W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-SOT223-4 Dimension: TO-261-4, TO-261AA Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 1.7A (Ta) Gate-Source Threshold Voltage: 4V @ 1mA Max Input Capacitance: 550pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 300 mOhm @ 1.7A, 10V Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Balance Quantity per package: 1k pcs

Manufacturer: Infineon Technologies
Win Source Part Number: 1024450-BSP373 E6327
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.8W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-SOT223-4
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 1.7A (Ta)
Gate-Source Threshold Voltage: 4V @ 1mA
Max Input Capacitance: 550pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 300 mOhm @ 1.7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Balance
Quantity per package: 1k pcs

Buy Now Datasheet

Technical Specifications

  DigiKey Win Source Electronics
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number BSP373E6327-ND 1024450-BSP373 E6327
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSP373 E6327
Polarity N-Channel N-Channel; N-Channel
Package Type TO-261-4, TO-261AA SOT3; PG-SOT223-4
Transistor Grade / Operating Range Automotive
V(BR)DSS 100 volts
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