BSP299 is an N-channel enhancement mode MOSFET rated for 500 V drain-source voltage and 0.4 A continuous drain current, packaged in SOT-223. It is avalanche rated with 130 mJ single-pulse energy, has a gate threshold voltage range of 2.1 to 4.0 V, and a typical on-state resistance of 3.1 Ω at 10 V gate bias. The device meets AEC-Q101 qualification, is RoHS compliant, and has a maximum operating junction temperature of 150 °C.
N-Channel 500V 400mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4-21
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | BSP299E6327-ND |
| Product Name | Single FETs, MOSFETs |
| Polarity | N-Channel |
