Infineon Technologies AG Single FETs, MOSFETs BSP297L6327

Description
SMALL-SIGNAL N-CHANNEL MOSFET
Description
SMALL-SIGNAL N-CHANNEL MOSFET
Datasheet
Datasheet Summary
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BSP297 is an N-channel MOSFET in a PG-SOT223 package for switching applications, rated for 200 V drain-source voltage and 0.66 A continuous drain current at 25 °C. It has a drain-source on-state resistance of 1.8 Ω at 10 V gate-source voltage and supports a reverse diode dv/dt of 6 kV/µs. The device is RoHS compliant, Pb-free, and qualified to AEC-Q101, with an operating temperature range of -55 to +150 °C and a power dissipation of 1.8 W. Thermal resistance from junction to solder point is 15 to 25 K/W.

Datasheet Summary
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BSP297 is an N-channel MOSFET in a PG-SOT223 package for switching applications, rated for 200 V drain-source voltage and 0.66 A continuous drain current at 25 °C. It has a drain-source on-state resistance of 1.8 Ω at 10 V gate-source voltage and supports a reverse diode dv/dt of 6 kV/µs. The device is RoHS compliant, Pb-free, and qualified to AEC-Q101, with an operating temperature range of -55 to +150 °C and a power dissipation of 1.8 W. Thermal resistance from junction to solder point is 15 to 25 K/W.

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - BSP297L6327 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
BSP297L6327
Single FETs, MOSFETs BSP297L6327
SMALL-SIGNAL N-CHANNEL MOSFET

SMALL-SIGNAL N-CHANNEL MOSFET

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global)
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number BSP297L6327
Product Name Single FETs, MOSFETs
Polarity N-Channel; N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 200 volts
IDSS 660 milliamps
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