Infineon Technologies AG Single FETs, MOSFETs BSP297 E6327

Description
N-Channel 200V 660mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
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Description
N-Channel 200V 660mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
Request a Quote Datasheet

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Single FETs, MOSFETs - BSP297E6327-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
BSP297E6327-ND
Single FETs, MOSFETs BSP297E6327-ND
N-Channel 200V 660mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4

N-Channel 200V 660mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4

Buy Now Datasheet
FETs - Single - BSP297 E6327 - 730117-BSP297 E6327 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - BSP297 E6327
730117-BSP297 E6327
FETs - Single - BSP297 E6327 730117-BSP297 E6327
Manufacturer: Infineon Technologies Win Source Part Number: 730117-BSP297 E6327 Packaging: Tape and Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: PG-SOT223-4 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: TO-261-4, TO-261AA Power Dissipation (Maximum): 1.8W Popularity: Low Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 200V Id - Continuous Drain Current: 660mA Rds On (Maximum) at Id, Vgs: 1.8Ohm at 660mA, 10V Gate Source Voltage(th) (Maximum) at Id: 1.8V at 400μA Gate Charge (Qg) (Maximum) at Vgs: 16.1nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 357pF at 25V

Manufacturer: Infineon Technologies
Win Source Part Number: 730117-BSP297 E6327
Packaging: Tape and Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-261-4, TO-261AA
Power Dissipation (Maximum): 1.8W
Popularity: Low
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 200V
Id - Continuous Drain Current: 660mA
Rds On (Maximum) at Id, Vgs: 1.8Ohm at 660mA, 10V
Gate Source Voltage(th) (Maximum) at Id: 1.8V at 400μA
Gate Charge (Qg) (Maximum) at Vgs: 16.1nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 357pF at 25V

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Technical Specifications

  DigiKey Win Source Electronics
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number BSP297E6327-ND 730117-BSP297 E6327
Product Name Single FETs, MOSFETs FETs - Single - BSP297 E6327
Polarity N-Channel N-Channel; N-Channel
Package Type TO-261-4, TO-261AA SOT3
Transistor Grade / Operating Range Automotive
V(BR)DSS 200 volts
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