Infineon Technologies AG Single FETs, MOSFETs BSP297 E6327

N-Channel 200V 660mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4

MOSFET N-CH 200V 660MA SOT223-4 Product overview: BSP297 E6327 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 660MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 660MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSP297 E6327 can be used for catalog matching and distributor lookup.

Manufacturer: Infineon Technologies
Win Source Part Number: 730117-BSP297 E6327
Packaging: Tape and Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-261-4, TO-261AA
Power Dissipation (Maximum): 1.8W
Popularity: Low
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 200V
Id - Continuous Drain Current: 660mA
Rds On (Maximum) at Id, Vgs: 1.8Ohm at 660mA, 10V
Gate Source Voltage(th) (Maximum) at Id: 1.8V at 400μA
Gate Charge (Qg) (Maximum) at Vgs: 16.1nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 357pF at 25V