The ALD110814PCL is a monolithic quad N-channel enhancement mode MOSFET array with precision-matched characteristics, designed for low-voltage analog applications such as current mirrors and differential amplifiers. It is housed in a 16-pin plastic dual in-line package (PDIP) with dimensions of 18.93mm to 21.33mm in length and 5.59mm to 7.11mm in width. The device has a gate threshold voltage of 1.40V (typical) with a match of ±10mV between devices, and a maximum drain-source voltage of 10.6V. It operates within a temperature range of 0°C to +70°C, features a typical gate leakage current of 3pA at 25°C, and a maximum power dissipation of 500mW. The MOSFETs exhibit a drain-source on resistance of 500Ω at VGS = +5.4V and a forward transconductance of 1.4 mmho. The part is RoHS compliant, as indicated by the 'L' suffix in ordering codes, and meets ESD sensitivity standards requiring static control during handling.
MOSFET Array 4 N-Channel, Matched Pair 10.6V 12mA, 3mA 500mW Through Hole 16-PDIP
Mosfet Array 4 N-Channel, Matched Pair 10.6V 12mA, 3mA 500mW Through Hole 16-PDIP
MOSFET 4N-CH 10.6V 16DIP
| Advanced Linear Devices, Inc. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | ALD110814PCL | 1014-1028-ND | ALD110814PCL |
| Product Name | QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD® PRECISION MATCHED PAIR MOSFET ARRAY | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | ||
| MOSFET Operating Mode | Enhancement; Precision Enhancement Mode | ||
| V(BR)DSS | 10 volts | ||
| IDSS | 3 milliamps |