Advanced Linear Devices, Inc. QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD® PRECISION MATCHED PAIR MOSFET ARRAY ALD110814PCL

Description
MOSFET Array 4 N-Channel, Matched Pair 10.6V 12mA, 3mA 500mW Through Hole 16-PDIP
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Description
MOSFET Array 4 N-Channel, Matched Pair 10.6V 12mA, 3mA 500mW Through Hole 16-PDIP
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Datasheet
Datasheet Summary
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The ALD110814PCL is a monolithic quad N-channel enhancement mode MOSFET array with precision-matched characteristics, designed for low-voltage analog applications such as current mirrors and differential amplifiers. It is housed in a 16-pin plastic dual in-line package (PDIP) with dimensions of 18.93mm to 21.33mm in length and 5.59mm to 7.11mm in width. The device has a gate threshold voltage of 1.40V (typical) with a match of ±10mV between devices, and a maximum drain-source voltage of 10.6V. It operates within a temperature range of 0°C to +70°C, features a typical gate leakage current of 3pA at 25°C, and a maximum power dissipation of 500mW. The MOSFETs exhibit a drain-source on resistance of 500Ω at VGS = +5.4V and a forward transconductance of 1.4 mmho. The part is RoHS compliant, as indicated by the 'L' suffix in ordering codes, and meets ESD sensitivity standards requiring static control during handling.

Datasheet Summary
Powered by GS/AI

The ALD110814PCL is a monolithic quad N-channel enhancement mode MOSFET array with precision-matched characteristics, designed for low-voltage analog applications such as current mirrors and differential amplifiers. It is housed in a 16-pin plastic dual in-line package (PDIP) with dimensions of 18.93mm to 21.33mm in length and 5.59mm to 7.11mm in width. The device has a gate threshold voltage of 1.40V (typical) with a match of ±10mV between devices, and a maximum drain-source voltage of 10.6V. It operates within a temperature range of 0°C to +70°C, features a typical gate leakage current of 3pA at 25°C, and a maximum power dissipation of 500mW. The MOSFETs exhibit a drain-source on resistance of 500Ω at VGS = +5.4V and a forward transconductance of 1.4 mmho. The part is RoHS compliant, as indicated by the 'L' suffix in ordering codes, and meets ESD sensitivity standards requiring static control during handling.

Suppliers

Company
Product
Description
Supplier Links
QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD® PRECISION MATCHED PAIR MOSFET ARRAY - ALD110814PCL - Advanced Linear Devices, Inc.
Sunnyvale, CA, United States
QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD® PRECISION MATCHED PAIR MOSFET ARRAY
ALD110814PCL
QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD® PRECISION MATCHED PAIR MOSFET ARRAY ALD110814PCL
MOSFET Array 4 N-Channel, Matched Pair 10.6V 12mA, 3mA 500mW Through Hole 16-PDIP

MOSFET Array 4 N-Channel, Matched Pair 10.6V 12mA, 3mA 500mW Through Hole 16-PDIP

Supplier's Site Datasheet
FET, MOSFET Arrays - 1014-1028-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
1014-1028-ND
FET, MOSFET Arrays 1014-1028-ND
Mosfet Array 4 N-Channel, Matched Pair 10.6V 12mA, 3mA 500mW Through Hole 16-PDIP

Mosfet Array 4 N-Channel, Matched Pair 10.6V 12mA, 3mA 500mW Through Hole 16-PDIP

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - ALD110814PCL - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
ALD110814PCL
Discrete Semiconductor Products - Transistors - FETs, MOSFETs ALD110814PCL
MOSFET 4N-CH 10.6V 16DIP

MOSFET 4N-CH 10.6V 16DIP

Supplier's Site

Technical Specifications

  Advanced Linear Devices, Inc. DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number ALD110814PCL 1014-1028-ND ALD110814PCL
Product Name QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD® PRECISION MATCHED PAIR MOSFET ARRAY FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
MOSFET Operating Mode Enhancement; Precision Enhancement Mode
V(BR)DSS 10 volts
IDSS 3 milliamps
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