Texas Instruments TPS1101 Single P-channel Enhancement-Mode MOSFET TPS1101DG4

The TPS1101 is a single P-channel enhancement-mode MOSFET designed for low-voltage power distribution in battery-powered systems. It is available in an 8-pin SOIC (D) package and a 16-pin TSSOP (PW) package, with the SOIC variant suitable for standard PCB layouts and the TSSOP for height-restricted applications. The device has a drain-to-source voltage rating of -15 V, a gate-to-source voltage rating of -15 V, and a continuous drain current of up to 1.1 A at 125°C, with a maximum power dissipation of 791 mW in the SOIC package at 25°C. It operates over a junction temperature range of -40°C to 150°C and features ESD protection up to 2 kV per MIL-STD-883C, Method 3015. The TPS1101DG4 is a variant within this series with a specified lead finish and RoHS compliance, sharing all key electrical and thermal ratings defined for the TPS1101 family.