N-Channel 30V 16A (Ta) 1.56W (Ta) Surface Mount PG-DSO-8
N-Channel 30V 16A (Ta) 1.56W (Ta) Surface Mount PG-DSO-8
N-Channel 30V 16A (Ta) 1.56W (Ta) Surface Mount PG-DSO-8
MOSFET N-CH 30V 16A 8DSO Product overview: BSO040N03MSGXUMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 16A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 16A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSO040N03MSGXUMA
Manufacturer: Infineon Technologies
Win Source Part Number: 201403-BSO040N03MSGX
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.56W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-DSO-8
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 16A (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 73nC @ 10V
Max Input Capacitance: 5700pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Balance
MOSFET, N-CH, 30V, 16A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0033ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation RoHS Compliant: Yes
MOSFET N-CH 30V 16A 8DSO
MOSFET N-Ch 30V 20A DSO-8 OptiMOS 3M
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 448-BSO040N03MSGXUMA1CT-ND | 278-BSO040N03MSGXUMA1 | 201403-BSO040N03MSGXUMA1 | 13AC8347 | BSO040N03MSGXUMA1 | BSO040N03MSGXUMA1 |
| Product Name | Single FETs, MOSFETs | 30V 16A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSO040N03MSGXUMA1 | Mosfet, N-Ch, 30V, 16A, Soic; Transistor Polarity Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | |||
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | Tape & Reel (TR) | SO-8; SOT3; PG-DSO-8 | TO-3 | 8-SOIC (0.154, 3.90mm Width) | |
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | 30 volts | 30 volts | ||||
| Transconductance | 0.0380 kS |
