Infineon Technologies AG MOSFET BSC159N10LSF G

Description
MOSFET N-Ch 100V 63A TDSON-8 OptiMOS 2
Description
MOSFET N-Ch 100V 63A TDSON-8 OptiMOS 2

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Sheung Wan, Hong Kong
MOSFET N-Ch 100V 63A TDSON-8 OptiMOS 2

MOSFET N-Ch 100V 63A TDSON-8 OptiMOS 2

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Mosfet, N Channel, 100V, 63A, Pg-Tsdson; Channel Type Infineon - 60R2518 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 100V, 63A, Pg-Tsdson; Channel Type Infineon
60R2518
Mosfet, N Channel, 100V, 63A, Pg-Tsdson; Channel Type Infineon 60R2518
MOSFET, N CHANNEL, 100V, 63A, PG-TSDSON; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:63A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.85V RoHS Compliant: Yes

MOSFET, N CHANNEL, 100V, 63A, PG-TSDSON; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:63A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.85V RoHS Compliant: Yes

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Technical Specifications

  VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number BSC159N10LSF G 60R2518
Product Name MOSFET Mosfet, N Channel, 100V, 63A, Pg-Tsdson; Channel Type Infineon
Polarity N-Channel
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