Infineon Technologies AG Mosfet, N Channel, 100V, 63A, Pg-Tsdson; Channel Type Infineon BSC159N10LSF G

Description
MOSFET, N CHANNEL, 100V, 63A, PG-TSDSON; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:63A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.85V RoHS Compliant: Yes
Description
MOSFET, N CHANNEL, 100V, 63A, PG-TSDSON; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:63A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.85V RoHS Compliant: Yes

Suppliers

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Description
Supplier Links
Mosfet, N Channel, 100V, 63A, Pg-Tsdson; Channel Type Infineon - 60R2518 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 100V, 63A, Pg-Tsdson; Channel Type Infineon
60R2518
Mosfet, N Channel, 100V, 63A, Pg-Tsdson; Channel Type Infineon 60R2518
MOSFET, N CHANNEL, 100V, 63A, PG-TSDSON; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:63A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.85V RoHS Compliant: Yes

MOSFET, N CHANNEL, 100V, 63A, PG-TSDSON; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:63A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.85V RoHS Compliant: Yes

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-Ch 100V 63A TDSON-8 OptiMOS 2

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Technical Specifications

  Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 60R2518 BSC159N10LSF G
Product Name Mosfet, N Channel, 100V, 63A, Pg-Tsdson; Channel Type Infineon MOSFET
Polarity N-Channel
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