Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK2552B-T1-AT 2SK2552B-T1-AT

Description
Manufacturer: Renesas Electronics America Win Source Part Number: 855399-2SK2552B-T1-A T Series: * Package: Bulk Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 94 pct. Supply and Demand Status: Limited Quantity per package: 1 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.21.0095
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Description
Manufacturer: Renesas Electronics America Win Source Part Number: 855399-2SK2552B-T1-A T Series: * Package: Bulk Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 94 pct. Supply and Demand Status: Limited Quantity per package: 1 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.21.0095
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Datasheet
Datasheet Summary
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The 2SK2552B is an N-channel silicon junction field effect transistor designed for impedance conversion in electret condenser microphones. It uses the SC-75 (USM) package, measuring 1.6 ±0.1 mm in length and 0.75 ±0.05 mm in width, with a height of 0.6 mm typ. The device has a maximum drain-to-source voltage of 20 V, a drain current rating of 10 mA, and a total power dissipation of 100 mW. It operates with a junction temperature up to 125 °C and is classified as a standard-grade product for general-use applications. The transistor exhibits low noise performance of −108.5 dB typ. at VDD = 2.0 V, C = 5 pF, and RL = 2.2 kΩ, and features a zero gate voltage drain current (IDSS) ranging from 90 to 430 κ based on marking classification. It complies with RoHS standards.

Datasheet Summary
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The 2SK2552B is an N-channel silicon junction field effect transistor designed for impedance conversion in electret condenser microphones. It uses the SC-75 (USM) package, measuring 1.6 ±0.1 mm in length and 0.75 ±0.05 mm in width, with a height of 0.6 mm typ. The device has a maximum drain-to-source voltage of 20 V, a drain current rating of 10 mA, and a total power dissipation of 100 mW. It operates with a junction temperature up to 125 °C and is classified as a standard-grade product for general-use applications. The transistor exhibits low noise performance of −108.5 dB typ. at VDD = 2.0 V, C = 5 pF, and RL = 2.2 kΩ, and features a zero gate voltage drain current (IDSS) ranging from 90 to 430 κ based on marking classification. It complies with RoHS standards.

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK2552B-T1-AT - 855399-2SK2552B-T1-AT - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK2552B-T1-AT
855399-2SK2552B-T1-AT
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK2552B-T1-AT 855399-2SK2552B-T1-AT
Manufacturer: Renesas Electronics America Win Source Part Number: 855399-2SK2552B-T1-A T Series: * Package: Bulk Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 94 pct. Supply and Demand Status: Limited Quantity per package: 1 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.21.0095

Manufacturer: Renesas Electronics America
Win Source Part Number: 855399-2SK2552B-T1-AT
Series: *
Package: Bulk
Categories: Discrete Semiconductor Products
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 94 pct.
Supply and Demand Status: Limited
Quantity per package: 1
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.21.0095

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 855399-2SK2552B-T1-AT
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK2552B-T1-AT
Package Type SOT3
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