Infineon Technologies AG MOSFET BSC080N03MS G

N-channel MOSFET for 5V driver applications, packaged in PG-TDSON-8 with a continuous drain current of 53 A at V_GS=10 V and T_C=25 °C, and a maximum on-resistance of 8.0 mΩ at V_GS=10 V and I_D=30 A. Rated for 30 V drain-source voltage, ±20 V gate-source voltage, and operates over a junction temperature range of -55 °C to 150 °C. Features 100% avalanche testing with single-pulse avalanche energy of 15 mJ at I_D=35 A. Thermal resistance from junction to case is 3.6 K/W bottom-side. RoHS compliant and halogen-free per IEC 61249-2-21. Qualified per JEDEC J-STD-20 and JESD22.