Texas Instruments TPS1101 Single P-channel Enhancement-Mode MOSFET TPS1101DRG4

Single P-channel Enhancement-Mode MOSFET 8-SOIC

MOSFET Single P-Ch Enh-Mode MOSFET Product overview: TPS1101DRG4 from Texas Instruments is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-TPS1101DRG4 can be used for catalog matching and distributor lookup.

Manufacturer: Texas Instruments
Win Source Part Number: 1111271-TPS1101DRG4
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 791mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V
Status: Active
Temperature Range - Operating: -40°C to 150°C (TJ)
Case / Package: 8-SOIC
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 15V
Continuous Drain Current at 25°C: 2.3A (Ta)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 11.25nC @ 10V
Maximum Gate-Source Voltage: +2V, -15V
Maximum Rds On at Id,Vgs: 90 mOhm @ 2.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Sufficient