Single P-channel Enhancement-Mode MOSFET 8-SOIC
Manufacturer: Texas Instruments
Win Source Part Number: 1111271-TPS1101DRG4
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 791mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V
Status: Active
Temperature Range - Operating: -40°C to 150°C (TJ)
Case / Package: 8-SOIC
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 15V
Continuous Drain Current at 25°C: 2.3A (Ta)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 11.25nC @ 10V
Maximum Gate-Source Voltage: +2V, -15V
Maximum Rds On at Id,Vgs: 90 mOhm @ 2.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Sufficient
| Texas Instruments | Win Source Electronics | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | TPS1101DRG4 | 1111271-TPS1101DRG4 |
| Product Name | TPS1101 Single P-channel Enhancement-Mode MOSFET | TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPS1101DRG4 |
| Polarity | P-Channel | P-Channel; P-Channel |
| V(BR)DSS | 15 volts | |
| PD | 791 milliwatts |
