NPN silicon RF transistor for low-noise broadband amplification, rated for collector-emitter voltage up to 12 V and collector current up to 20 mA, with a maximum power dissipation of 175 mW and a transition frequency of up to 8 GHz. Housed in the SC75 (SOT-323) surface-mount package, it operates from -65°C to 150°C junction temperature. Features a noise figure of 1.45 dB at 900 MHz and a maximum stable power gain of 19.5 dB at 900 MHz. Meets ESD sensitivity standards.
RF Transistor NPN 12V 20mA 8GHz 175mW Surface Mount PG-SC-75
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | BFR181TE6327-ND |
| Product Name | Bipolar RF Transistors |
| Polarity | NPN |
